Global SiC Power Market - Growth Drivers, Opportunities And Forecast Analysis To 2018-2026
Summary -
A New Market
Study, Titled “Global SiC Power Market Analysis, Trends And Opportunities -2018-2026 ” Has Been Featured On Wiseguyreports.
A power device is a semiconductor,
which is used as a switch or a rectifier in the power electronic system. SiC is
a compound semiconductor comprised of silicon and carbon and has 10 times the
dielectric breakdown field strength, bandgap, and thermal conductivity than
silicon. The special characteristics of SiC power devices include
high-temperature operation stability, high thermal conductivity, high-energy
bandgap, and faster switching time. These characteristics of SiC power devices
are encouraging original equipment manufacturers (OEMs) to adopt these devices
over traditional Si power devices.
Global SiC Power Components Key
Players:
Infineon CoolSiC™
Mitsubishi Electric DIPIPM™/ DIPPFC™
STMicroelectronics
Fuji Electric
Toshiba Plastic Case Module IEGTs
(PMIs)/ Hybrid SiC-SBD Modules
ON Semiconductor TO-247/D2PAK /DPAK
Vishay Intertechnology FREDPt®
The world's top five SiC Power
Components manufacturing companies are Infineon, ON Semiconductor Corp,
STMicroelectronics N.V. Mitsubishi Electric Corp, and Vishay Intertechnology.
With approximately 43.5% of the world's share, Infineon Germany has become the
world's number one semiconductor manufacturer with approximately 19.9%.
By the product type, the market is
primarily split into
SiC Power Components Diodes
SiC Power Components Modules
SiC Power Components Transistors
Other
By the end users/application, this
report covers the following segments
Electric Vehicle
Power Supplies
Photovoltaics
Others
In terms of applications, electric
vehicle applications account for a large proportion, accounting for about
one-thirds of the total. And Power Supplies and Photovoltaics application
technology is developing rapidly, and demand has been increasing.
Infineon's 2018 electric vehicle
application cumulative revenue is $ 1.9billion. It accounts for 1/3 of total
SiC Power Components Application revenue.
SiC Power Components Downstream
Industry
New Energy Vehicle
High-voltage Applications
LED
As electric vehicles and other
systems grow, the silicon carbide (SiC) power semiconductor market is
experiencing a sudden surge in demand.
SiC-based power semiconductors are
used in on-board charging devices for electric vehicles, and this technology is
entering a key part of the system, traction inverters. The traction inverter
provides traction to the electric motor to propel the vehicle forward. For this
application, SiC power devices are used in some models.
SiC Compared with traditional
silicon-based devices, the breakdown field strength of SiC is 10 times that of
traditional silicon-based devices, and the thermal conductivity is 3 times that
of traditional silicon-based devices. It is very suitable for high-voltage
applications such as power supplies, solar inverters, trains, etc. And wind
turbines. In addition, SiC is also used in the manufacture of LEDs.
The main application areas of silicon
carbide are photovoltaic systems, industrial power supplies, and electric
vehicle charging infrastructure. The advantages of silicon carbide systems are
obvious. The penetration of industrial applications is currently beginning,
mainly uninterruptible power supplies; there are also initial designs in
important variable-speed drive markets (servo motors, robots). These designs
also benefit from the special performance of new technologies. Achieve very
economical, high-performance implementations. We also consider auxiliary
devices on trains to be a promising application. In the medium to long term,
hybrid or purely electric trains also have great potential. Applications here
are, for example, drive systems for mainly inverters and on-board chargers.
The research report has incorporated
the analysis of different factors that augment the market’s growth. It
constitutes trends, restraints, and drivers that transform the market in either
a positive or negative manner. This section also provides the scope of
different segments and applications that can potentially influence the market
in the future. The detailed information is based on current trends and historic
milestones. This section also provides an analysis of the volume of sales about
the global market and also about each type from 2015 to 2026. This section
mentions the volume of sales by region from 2015 to 2026. Pricing analysis is
included in the report according to each type from the year 2015 to 2026,
manufacturer from 2015 to 2020, region from 2015 to 2020, and global price from
2015 to 2026.
A thorough evaluation of the
restrains included in the report portrays the contrast to drivers and gives
room for strategic planning. Factors that overshadow the market growth are pivotal
as they can be understood to devise different bends for getting hold of the
lucrative opportunities that are present in the ever-growing market.
Additionally, insights into market expert’s opinions have been taken to
understand the market better.
Global SiC Power Devices Market:
Segment Analysis
The research report includes specific
segments such as application and product type. Each type provides information
about the sales during the forecast period of 2015 to 2026. The application
segment also provides revenue by volume and sales during the forecast period of
2015 to 2026. Understanding the segments helps in identifying the importance of
different factors that aid the market growth.
Global SiC Power Devices Market:
Regional Analysis
The research report includes a
detailed study of regions of North America, Europe, China, and Japan alone. The
report has been curated after observing and studying various factors that
determine regional growth such as economic, environmental, social,
technological, and political status of the particular region. Analysts have
studied the data of revenue, sales, and manufacturers of each region. This
section analyses region-wise revenue and volume for the forecast period of 2015
to 2026. These analyses will help the reader to understand the potential worth
of investment in a particular region.
Global SiC Power Devices Market:
Competitive Landscape
This section of the report identifies
various key manufacturers of the market. It helps the reader understand the
strategies and collaborations that players are focusing on combat competition
in the market. The comprehensive report provides a significant microscopic look
at the market. The reader can identify the footprints of the manufacturers by
knowing about the global revenue of manufacturers, the global price of
manufacturers, and sales by manufacturers during the forecast period of 2015 to
2019.
Following are the segments covered by
the report are:
SiC Power Components Diodes
SiC Power Components Modules
SiC Power Components Transistors
Other
By Application:
Electric Vehicle
Power Supplies
Photovoltaics
Others
Key Players:
The Key manufacturers that are
operating in the global SiC Power Devices market are:
ROHM Semiconductor
Infineon
Mitsubishi Electric Corp
STMicroelectronics N.V.
Toshiba Corp
Fuji Electric Co Ltd
Infineon Technologies
ON Semiconductor Corp
Competitive Landscape
The analysts have provided a
comprehensive analysis of the competitive landscape of the global SiC Power
Devices market with the company market structure and market share analysis of
the top players. The innovative trends and developments, mergers and
acquisitions, product portfolio, and new product innovation to provide a
dashboard view of the market, ultimately providing the readers accurate measure
of the current market developments, business strategies, and key financials.
FOR MORE DETAILS:- https://www.wiseguyreports.com/reports/5142856-global-sic-power-devices-market-research-report-2020
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